FDI040N06 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application
* DC to DC converto.

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